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GaN Substrate Defect Inspection System
GaN Substrate Defect Inspection System
The GaN Substrate Defect Inspection System uses non-destructive optical inspection to identify and characterize defects in gallium nitride (GaN) substrates, supporting material quality evaluation and process development. Compatible with 2-, 4-, and 6-inch GaN substrates, the system detects a range of defects, including threading dislocations, stacking faults, inversion domains, grain boundaries, V-pits, voids, and cracks, helping users understand defect types and their distribution across the substrate.
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Features

01

Non-Destructive

02

Customizable Detection Suite

03

Collaborative R&D

Specifications

Materials Si-Doped Freestanding GaN Substrates
Wafer Sizes 1 × 1 cm, 2", 4" and 6"
Inspection Throughput 12 WPH @ 2"
Defect Types Threading Dislocations, Stacking Faults, Inversion Domains, Grain Boundaries, V-Pits, Voids, Cracks and Other Defects
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