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GaN Substrate Defect Inspection System
GaN Substrate Defect Inspection System
The GaN Substrate Defect Inspection System uses non-destructive optical inspection to identify and characterize defects in gallium nitride (GaN) substrates, supporting material quality evaluation and process development. Compatible with 2-, 4-, and 6-inch GaN substrates, the system detects a range of defects, including threading dislocations, stacking faults, inversion domains, grain boundaries, V-pits, voids, and cracks, helping users understand defect types and their distribution across the substrate.

The system offers a customizable, expandable detection suite that can be configured for specific material characteristics and inspection requirements. Joint development and application collaboration extend its capabilities to address new and complex defect types, supporting evolving needs in GaN materials research and inspection.
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Features

01

Non-Destructive

02

Customizable Detection Suite

03

Collaborative R&D

Specifications

Materials GaN substrate
Wafer Sizes 2", 4" and 6"
Inspection Throughput 4-6 wafers/h (2")
Defect Types Threading Dislocation, Stacking Faults, Inversion Domains, Grain Boundaries, V-pits, Void, Crack and other defects

Examples

Wafer Imaging

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Multi-category Defect Identification Atlas of GaN Substrate

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  • Non-destructive characterization of GaN substrates, capable of distinguishing defects including dislocations, stacking faults, inversion domains, voids, and scratches.
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