TA-PRO Ultrafast Transient Absorption Spectroscopy System

SPECIFICATIONS

Laser type	Ti:Sapphire Lasers	Yb-Based Lasers
Spectral range	280 - 380 nm (optional)	400 - 600 nm*
		330 - 650 nm	500 - 950 nm
		430 - 800 nm	1100 - 1600 nm
		850 - 1500 nm	—
Mode	Transmission / reflection
Time window	8 ns
Sensitivity	≤ 10⁻⁶ OD (with 100 kHz high-speed camera)
IRF	≤ 1.5 × Pulse width
Detector	Vis: 8 kHz (default)
Detector		NIR: 6 kHz
Automation system	Auto optical path switching & calibration
Sample holder	Solution, film, and powder
Compatibility	Cryostat, diamond anvil cell, magnetic field, and more
Software	Data acquisition, analysis and fitting

Expandable Contents

TCSPC	Time resolution ≤100 ps
Ultrafast FL module	Time resolution ≤1.5 × Pulse width
Microscopy module	Microscopic TA imaging
Nanosecond TA module	Nanosecond TA

*Higher noise around 515 nm for Yb laser.

Probe Range

280-2200 nm spectral range for

1030 nm femtosecond laser

330-2200 nm spectral range for

800 nm femtosecond laser

High-Speed Data Collection: 10 s (90 time-delay points)

Sensitivity: 10⁻⁶ OD by using 100 kHz high-speed camera (optional)

Adopt high speed 100 kHz line array detector implementation pulse-to-pulse detection, high-sensitivity full-spectrum collection (not single-wavelength collection)

Sensitivity of high-speed camera

under different integration times

High-speed camera points 10 seconds

visible light signal-to-noise ratio

Low-Excitation Test - Data collection under ultra-low excitation intensity

Sample	Perovskite	Probe wavelength	500-950nm
Excitation wavelength	405 nm	Excitation energy	~ 0.24 nJ (dia.=l mm)

TA spectra

TA spectra

TA kinetics

Sample Data

DUV Example - wide-bandgap semiconductors

Sample	ZnO	No. of scans	3
Excitation wavelength	257.5 nm	No. of points	150

TA spectra

TA spectra

TA kinetics

UV-Vis Example - Charge transport in photovoltaic materials

Sample	Perovskite film	No. of scans	5
Excitation wavelength	405 nm	No. of points	150

TA spectra

TA spectra

TA kinetics

Vis Example -Charge transfer between layers of 2D materials

Sample	Bulk MoS₂	No. of scans	3
Excitation wavelength	515 nm	Data points	150

TA spectra

TA spectra

TA kinetics

NIR Example - Narrow bandgap semiconductor and excited state absorption

Sample	Multilayer graphite	No. of scans	1
Excitation wavelength	495 nm	Data points	150

TA spectra

TA spectra

TA kinetics

TA-FL Ultrafast Fluorescence Lifetime

FL Upconversion

Single-wavelength scanning acquisition

Time window: fs to ns

High sensitivity with background noise suppression

Kerr Gate

Direct spectrum acquisition

Time window: fs to ns

Enables multi-spectral detection of ultrafast dynamics

Principle

Principle of FL Upconversion

Principle of Kerr Gate

Specifications *

FL Upconversion

FL detection wavelength range	360 - 950 nm
Time window	8 ns
IRF	≤ 1.4 times pulse width
Detection mode	Single wavelength kinetic scan
		Broadband spectral scan
		Dynamic 3D detection

Kerr Gate

Spectral range	355 nm - 1100 nm
Pump range	315 - 2600 nm
Time resolution	≤ 1 ps
Time window	8 ns
Spectral resolution	0.4 nm
Acquisition mode	Transmission / Reﬂection

*Paired with 1030 nm laser

Sample Data

FL Upconversion — Research on the ultrafast FL in dye molecules

Sample	RhB	No. of scans	3
Excitation wavelength	515 nm : 10 mw	Fluorescence range	530 nm - 750 nm

FL spectrum

FL spectrum

FL kinetics

Kerr Gate — Pterostilbene ultrafast FL kinetics

Sample	Pterostilbene	No. of scans	3
Excitation wavelength	345 nm : 2 mw	Collect points	150
Fluorescence range	355 nm - 460 nm	Exposure time	6 s

FL spectrum

FL spectrum

FL kinetics

TA-MICRO Ultrafast Microscopic Imaging

Specifications

Microscopic Kinetics Imaging Module

Mode	Micro-spectroscopy acquisition / wide-ﬁeld TA imaging / carrier migration imaging
Spatial resolution	< 500 nm
Camera wavelength range	400 - 800 nm
Camera wavelength range		900 - 1700 nm (NIR)
Carrier migration accuracy	< 50 nm
Objective	10 × , 40 × , 50 × , 100 ×

Sample Data

Microscope TA

Micro-area Transmission Test

Sample	WS₂
Excitation wavelength	515 nm
Probe wavelength	500-850 nm

Bright-field mapping

TA spectra

TA spectra

FL kinetics

Micro-area Reﬂection Test

Sample	Monolayer WS₂ (substrate: Si)
Excitation wavelength	515 nm
Probe wavelength	Visible

Bright-field mapping

TA spectra

TA spectra

FL kinetics

Micro-zone TA Imaging: Spatial Distribution of TA Signals in Micro/Nano Samples

Wide-Field TA Imaging

Sample	WS₂
Excitation wavelength	515 nm
Probe wavelength	610 nm

Wide-field TA mapping

Near Infrared Imaging

Sample	WS₂
Excitation wavelength	515 nm
Probe wavelength	900 nm

Wide-field TA mapping

Carrier Diﬀusion Data Diagram

Sample	F₁₆CuPc
Excitation wavelength	650 nm
Probe wavelength	510 nm

Carrier migration process

Intensity profile

Normalization

Diffusion coefficient

TA-NANO Nanosecond Transient Absorption

· Integrated nanosecond laser & electrical pulse generator

· Electronic delay & independent supercontinuum white light source

· Sub-ns to ms photo/electrical dynamics detection

· Compatible with ultrafast transient absorption system

Specifications

Main

Mode	Switchable Transmission / Reflection Mode
Wavelength range	360 - 1700 nm
Time window	≤ 400 μs
Detection time resolution	8 ns (electrically pumped)，1 ns (optically pumped)
Sensitivity	≤ 0.2 mOD
Reference module	Additional data acquisition & spectral detection system
		Eliminates probe white light jitter noise
		High SNR & acquisition efficiency

Nanosecond Supercontinuum White Light Laser

Spectral range	350 - 1800 nm
Pulse width / repetition rate	~ 800 ps，2 KHz
Power stability	± 1 %
Total average optical power	> 5 mW

Electrical Pump Extension Module

Maximum voltage	0 - 7 V (50 Ω)
Pulse width	10 ns - 990 ms
Repetition rate	1 Hz - 1 MHz
Rise time of electrical pulse from 0 to 5 V	≤ 390 μs

Sample Data

Nanosecond TA Testing

UV-Vis Example
Sample	SiC
Excitation wavelength	343 nm
Probe wavelength	400 - 1000 nm

TA spectra

TA spectra

TA kinetics

NIR Example

Sample	PbS
Excitation wavelength	343 nm
Probe wavelength	1100 - 1700 nm

TA spectra

TA spectra

TA kinetics

PUBLICATION

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TA-PRO

Product Features

Expandable Contents

Probe Range

High-Speed Data Collection: 10 s (90 time-delay points)

Sensitivity: 10⁻⁶ OD by using 100 kHz high-speed camera (optional)

Low-Excitation Test - Data collection under ultra-low excitation intensity

DUV Example - wide-bandgap semiconductors

UV-Vis Example - Charge transport in photovoltaic materials

Vis Example -Charge transfer between layers of 2D materials

NIR Example - Narrow bandgap semiconductor and excited state absorption

Principle of FL Upconversion

Principle of Kerr Gate

FL Upconversion

Kerr Gate

FL Upconversion — Research on the ultrafast FL in dye molecules

Kerr Gate — Pterostilbene ultrafast FL kinetics

Microscopic Kinetics Imaging Module

Microscope TA

Micro-area Transmission Test

Micro-area Reﬂection Test

Wide-Field TA Imaging

Near Infrared Imaging

Carrier Diﬀusion Data Diagram

Main

Nanosecond Supercontinuum White Light Laser

Electrical Pump Extension Module

Nanosecond TA Testing

NIR Example

Product Category

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