Home Products Fluorenscence Spectroscopy Series SOLARIUM-L Comprehensive Spectroscopy System for Perovskite Materials/Devices
Comprehensive Spectroscopy System for Perovskite Materials/Devices
SOLARIUM-L
Multi-functional imaging including high-precision PL/EL intensity, emission spectroscopy, time-resolved PL, PLQE, QFLS, and quasi-J-V.
High-resolution photocurrent/ photovoltage imaging.
Optional laser/sample scanning.
Compatibility with high-voltage and low-temperature modules.
Integrated control software for both data acquisition and analysis.
Compatible Samples: Silicon/perovskite/silicon-perovskite tandem solar cells and thin-film.
SPECIFICATIONS
Detection Function
| Single-junction Solar Cell | True J-V, Suns-PL (Pseudo-J-V), Voc, Jsc, MPP, PL/TRPL |
| PL intensity/lifetime, iVoc, PCE, FF, Rs, PLQE, QFLS, Photovoltage/photocurrent imaging | |
| Tandem Solar Cell | True J-V characteristics of tandem solar cells, Sub-cell Suns-PL, Pseudo-J-V, Voc, Jsc, MPP, PL/TRPL, EL |
| PL spectroscopy/intensity/lifetime imaging, iVoc, PCE, FF, RSH, PLQE, QFLS imaging |
Light Source Configuration
| Wavelength | LED | 450 nm, 532 nm, 850 nm, 900 nm (Standard configuration 450 and 850 nm) |
| Picosecond laser | 405 nm, 450 nm, 532 nm, 780 nm, 808 nm, 850 nm | |
| Optical Dynamic Range | LED | 0.01 - 1.5 suns |
Other Parameters
| Max single image size (wide-field) | ≤ 2x2 cm2 | ||
| Spectral Resolution | 0.14 nm @ 300 mm focal length monochromator, | ||
| @1200 grooves/mm grating, @25 μm CCD pixel size | |||
| Spectrum Acquisition Time | 5 ms (Min.) | ||
| Tandem Solar Cell | Wide-Field Imaging | a. High-resolution mode: 1.5 μm/pixel, imaging area < 7 mm² | |
| b. Standard-resolution mode: 8 μm/pixel, imaging area < 80 mm² | |||
| c. Used for PL/EL intensity, iVOC, PCE, FF, RS, RSH, etc. imaging | |||
| Spatial Resolution | CLSM imaging | a. Up to 260 nm spatial resolution (100× oil immersion) | |
| b. Objectives: 5×, 10×, 20×, 40×, 50×, 60×, 100× air/oil immersion | |||
| c. Used for PL spectral imaging, PLQE, QFLS imaging | |||
| TCSPC Module | IRF | ≤ 230 ps | |
| Spectral Range | 400-1100 nm (APD) | ||
| Laser Source | 375, 405 nm Picosecond Laser | ||
Note: 1. The size, wavelength, and power of the light source can be customized.
The LED area light source supports the integration of three types of light sources simultaneously.
SAMPLE DATA
High-resolution QFLS and PLQE Mapping
Perovskite film QFLS mapping
Perovskite film PLQY mapping
PL spectrum fitting
High-resolution fluorescence intensity/lifetime Mapping
PL intensity mapping
PL lifetime mapping
Comparison of decay curves at
points A and B
PL intensity Mapping with
typical cross-sectional intensity profiles
Spatial resolution up to 260 nm
in PL Mapping
Photocurrent Mapping
PL intensity mapping
Photocurrent mapping
EL Intensity Mapping
Bright-field image
EL intensity mapping
The bright field image shows the electrode surface, while the EL imaging is performed from the glass side.
Pseudo J-V Mapping and Imaging
Pseudo-J-V Mapping under controlled excitation power density
Bright-field imaging
PL intensity mapping
Comparison of pseudo J-V curves at different points
PCE
Filling Factor
Nid
iVoc mapping
Pseudo-J-V imaging under controlled load conditions
PL intensity mapping under different loads
Comparison of pseudo J-V curves at different points
iVoc
Charge collection efficiency
Filling Factor
Relative PCE
QFLS-Optical J-V imaging
Firstly, based on the generalized Planck's law, the PL intensity is converted to Vint(QFLS)
A certain voltage Vout is applied to the device(typically chosen near the maximum power point Vmpp), and it is assumed that the applied voltage is the same at different locations of the device. (Jin)xy is obtained through fitting using the pseudo J-V curve. JG,xy 。 is calculated based on the excitation light intensity. According to the simplified diode model:
Consequently, the J-V curve and series resistance RS at each spatial point can be derived. Furthermore, the FF and PCE at each point can be obtained from the J-V curve.
QFLS mapping
Maximum power point
condition QFLS profiling
Series resistance mapping
at maximum power point
PCE imaging
Silicon/Perovskite Tandem Solar Cell Testing
PL Intensity Imaging
Multi-wavelength integrated light source enables independent PL intensity imaging of sub-cells.
Bright-field image
Perovskite layer PL intensity mapping
| Excitation wavelength | 450 nm |
| Collection condition | 630 nm long-pass |
Si layer PL intensity mapping
| Excitation wavelength | 825 nm |
| Collection condition | 850 nm long-pass |
Pseudo J-V Testing
Enables independent pseudo J-V imaging of silicon and perovskite sub-cells.
Perovskite Layer QFLS Imaging
Perovskite Layer Pseudo-JV
Local enlargement (1)
Si Layer QFLS Imaging
Si Layer Pseudo-JV
Local enlargement (2)
PUBLICATION
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