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SN-9000 β-Ga₂O₃ Substrate & Epitaxy Defect Inspection System
SN-9000 β-Ga₂O₃ Substrate & Epitaxy Defect Inspection System
The SN-9000 is a non-destructive optical inspection system for β-Ga₂O₃ substrates and epitaxial wafers. Designed for both conductive-type and unintentionally doped (UID) materials, it combines high precision and efficiency with integrated substrate and epitaxial layer inspection to support material quality assessment and process optimization.
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Features

01

Non-Destructive

02

Substrate & Epi-Wafer Inspection

03

High-Precision & High-Efficiency

Specifications

Materials Conductive-Type and UID-Type β-Ga₂O₃ Substrates and Epitaxial Wafers
Wafer Sizes 1 × 1 cm, 2", 4", 6", 8"
Defect Types
Substrate: Dislocations, Voids, Contamination, Scratches
Epitaxy: Customizable Characterization of Various Morphological Defects within the Crystal Lattice
Inspection Throughput
β-Ga₂O₃ Substrate: >4 WPH @ 2"
β-Ga₂O₃ Epitaxy: >12 WPH @ 2"
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