The SN-9000 is a non-destructive optical inspection system for β-Ga₂O₃ substrates and epitaxial wafers. Designed for both conductive-type and unintentionally doped (UID) materials, it combines high precision and efficiency with integrated substrate and epitaxial layer inspection to support material quality assessment and process optimization.
For substrate inspection, the SN-9000 identifies dislocations across multiple crystal orientations, as well as voids, contamination, and scratches. Its detection of [010] linear dislocations has been cross-validated against XRT. For epitaxial wafer inspection, the system captures a range of morphological defects and offers customizable defect recognition to meet different inspection requirements.
With defect location matching accuracy of 1 μm, the SN-9000 enables precise correlation of defects between the substrate and epitaxial layer. This capability helps users track defect propagation from substrate to epitaxial layer, investigate root causes, and refine substrate and epitaxy processes. The system accommodates 1 × 1 cm samples and 2-, 4-, 6-, and 8-inch wafers. For 2-inch wafers, inspection throughput exceeds 4 wafers per hour for substrates and 12 wafers per hour for epitaxial wafers.
For substrate inspection, the SN-9000 identifies dislocations across multiple crystal orientations, as well as voids, contamination, and scratches. Its detection of [010] linear dislocations has been cross-validated against XRT. For epitaxial wafer inspection, the system captures a range of morphological defects and offers customizable defect recognition to meet different inspection requirements.
With defect location matching accuracy of 1 μm, the SN-9000 enables precise correlation of defects between the substrate and epitaxial layer. This capability helps users track defect propagation from substrate to epitaxial layer, investigate root causes, and refine substrate and epitaxy processes. The system accommodates 1 × 1 cm samples and 2-, 4-, 6-, and 8-inch wafers. For 2-inch wafers, inspection throughput exceeds 4 wafers per hour for substrates and 12 wafers per hour for epitaxial wafers.
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