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SL-9000 InP / GaAs Substrate Defect Inspection System
SL-9000 InP / GaAs Substrate Defect Inspection System
The SL-9000 is a non-destructive optical defect inspection system for compound semiconductor substrates. Designed primarily for indium phosphide (InP) substrates, it can also be adapted to inspect gallium arsenide (GaAs) substrates. The system images and maps threading dislocations and other lattice defects in both conductive and semi-insulating substrates, providing data for substrate quality assessment and process optimization.

The SL-9000 features an AI analysis system and can incorporate information on surface defects, including scratches, particles, and contamination, into substrate quality assessments. Its efficient, non-destructive inspection capabilities support the development, manufacturing, and quality control of compound semiconductor substrates.
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Features

01

Non-Destructive

02

High Throughput

03

High-Precision

Specifications

Materials InP Substrates (S-Doped / Fe-Doped); GaAs Substrates (Si-Doped)
Wafer Sizes 2", 3", 4" and 6"
Inspection Throughput 4 WPH @ 6"
Defect Types Threading Dislocations, Scratches and Other Defects
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