Materials Tested: SiC, GaN, Ga203, AlGaN, diamond, and other wide/ultra-wide bandgap semiconductors
Broad Wavelength Range: 206/257/343/515/1030 nm (motorized switching) (Deep UV excitation down to 192 nm achievable based on 800 nm laser)
Comprehensive Functionality: Integrated PL, Raman, SHG,and multiple spectroscopic techniques
Broad Wavelength Range: 206/257/343/515/1030 nm (motorized switching) (Deep UV excitation down to 192 nm achievable based on 800 nm laser)
Comprehensive Functionality: Integrated PL, Raman, SHG,and multiple spectroscopic techniques
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Products Feature
Materials Tested: SiC, GaN, Ga203, AlGaN, diamond, and other wide/ultra-wide bandgap semiconductors
Broad Wavelength Range: 206/257/343/515/1030 nm (motorized switching) (Deep UV excitation down to 192 nm achievable based on 800 nm laser)
Comprehensive Functionality: Integrated PL, Raman, SHG,and multiple spectroscopic techniques
Specifications
Fluorescence Module
| Features | Steady-state Fluorescence | Wide-field imaging, PL Emission Spectrum, PLI, PL Spectral Imaging |
| Transient Fluorescence | FLIM (via TCSPC) | |
| High-Speed | LED Sources | 265, 310, 365 nm (selectable) |
| Uniform Illumination Area | >1cm² | |
| Resolution | >1.5 μm/pixel | |
| Camera | 2048×2048 pixels, 6.5 μm px, 13.31 × 13.31 mm sensor | |
| Excitation Light Source* | 1030 nm fs-LD PSH Module | 515 nm, 343 nm, 257 nm, 206 nm Wavelength (Up to 1 MHz tuning frequency) |
| Spectral Imaging Detection Range (sCMOS Camera) | 200-1000 nm (supports UV-Vis-NIR imaging) | |
| PL Intensity Detection Range (PMT) | 190-870 nm | |
| Spatial Resolution | Up to 500 nm resolution (with 100× oil immersion objective) | |
| TCSPC Module | IRF | ≤300 ps |
| TR | ≤60 ps | |
| Translation Stag | Load Capacity | 5 kg |
| Travel Range** | 30 cm (X,Y)/1.5 cm (Z) | |
| Min. Step Size | 100 nm | |
| Straightness | <4 μm | |
| Bidirectional Repeatability | ±0.3 μm (X,Y); ±0.15 μm (Z) | |
| Standard | Includes driver and controller with synchronous signal output capabilities | |
Raman Module
| Excitation Source | Excitation Wavelength | 532 nm/633 nm/785 nm (Other Options) |
| Excitation Power | >150 mw (532 nm) | |
| Raman Spectral Resolution | <1.5 cm⁻¹ (300 mm focal length, 500 nm blaze@1800g/mm) | |
| Spatial Resolution | Axial Resolution | <1 μm@10 μm Pinhole; <2 μm@50 μm Pinhole |
| Lateral Resolution | 500 nm (100×Objective) | |
| Camera* | CMOS Type | BSI sCMOS |
| Detection Range | 200-1000 nm | |
| Resolution | 2048×2048 pixel (13.3×13.3 mm sensor) | |
SHG Module
| Excitation Wavelength | Femtosecond Laser (Picosecond Laser at 1064 nm optional) | |
| PMT Detector | Detection Range | 190-870 nm |
| High-Speed Scanning Module | Scan Type | Synchronized High-Speed Stage Scanning |
| Min. Step Size | 50 nm | |
| Repeatability | 250 nm | |
| Speed | 300 mm/s (max) | |
| Excitation Polarization Control | Motorized | |
Microscope Module
| Microscope Type | Expandable modular upright microscope | |
| Light Source Type | LED illumination system | |
| Illumination Mode | Episcopic illumination | |
| Objective Configuration | 5×, 10×, 20×, 40×, 50×, 60×, 100× Air/oil immersion objectives | |
| Auto-focus Module (Optional) | Response Speed | 40 ms |
| Sensitivity | 200 nm | |
Spectrometer Module
| Spectrometer Type | Czerny-Turner | |
| Focal Length | 200, 300, 500 mm (selectable) | |
| Reciprocal Linear Dispersion | 2.44 nm/mm @435.84 nm @1200g/mm grating | |
| Scanning Step Resolution | 0.02 nm @1200g/mm grating | |
| Spectral Resolution | PMT | 0.08 nm |
| CCD (25 μm pixel) | 0.14 nm | |
| Wavelength Accuracy | ±0.1 nm (@1200 g/mm) | |
| Wavelength Repeatability | 0.01 nm (@1200 g/mm) | |
Expansion Capabilities
| External Field Conditioning | Extendable to low temperature, high pressure, and external magnetic fields |
Application
