DISPEC-9000 Automatic Non-destructive SiC Substrate Dislocation Defect Inspection System

Home Products Semiconductor Optical Inspection Series DISPEC-9000 Automatic Non-destructive SiC Substrate Dislocation Defect Inspection System DISPEC-9000 Automatic Non-destructive SiC Substrate Dislocation Defect Inspection System

DISPEC-9000 Automatic Non-destructive SiC Substrate Dislocation Defect Inspection System

The DISPEC‑9000, based on the advanced Pump‑Probe Reflection principle, enables rapid optical non-destructive inspection of 6‑, 8‑, and 12‑inch SiC substrates. It accurately identifies three critical dislocation types (TSD, TED, BPD) while also detecting SF, MP, carbon inclusions, and polycrystalline defects. The system supports dual-side inspection of both Si and C faces. Its inspection throughput is highly efficient: 4–5 wafers per hour for 6‑inch, 2–3 wafers per hour for 8‑inch, and approximately 1 hour per wafer for 12‑inch (manual loading).

Equipped with AI-powered algorithms, DISPEC‑9000 assists in precise defect identification and density analysis, while also supporting customizable defect analysis. This enables full-chain defect tracking from substrate to epitaxy to device. Compared with traditional KOH etching methods, DISPEC‑9000 not only provides non-destructive detection but can effectively distinguish between TSD and TED signals, with results highly consistent with XRT measurements. It helps substrate manufacturers reduce production costs and offers strong support for cost efficiency improvements across the entire industry chain.

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Key Features

Optical non-destructive inspection replaces KOH etching
AI-assisted precise identification and classification of defects such as TSD, TED, BPD, SF, and MP
High speed and high throughput to meet mass production inspection requirements
Inspection accuracy comparable to XRT
Compatible with ingot and non-standard seed crystal inspection

Overcoming Industry Challenges

Traditional KOH etching methods are not only destructive but also generally unable to accurately distinguish between TSD and TED, leading to a severe underestimation of TSD density in SiC substrates. By combining non-destructive detection with AI-based recognition, this product can effectively differentiate and identify TSD and TED signals, with results highly consistent with XRT measurements.

Throughput	4-5 wafers/hour (6"); 2-3 wafers/hour (8"); 12" manual loading
Supported Inspection Object	N-type SiC substrate
Compatible Sample Sizes	6", 8", and 12
Inspection Defect Type	TED, TSD, BPD, SF, MP, carbon inclusions, heterocrystalline defects, and other defects
Featured Functions	Capable of inspecting both the Si face and C face; AI-powered precise defect identification and density analysis; Customizable defect analysis capabilities.

DISPEC-9000 Automatic Non-destructive SiC Substrate Dislocation Defect Inspection System

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