DISPEC-9000 Automatic Non-destructive SiC Substrate Dislocation Defect Inspection System
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DISPEC-9000 Automatic Non-destructive SiC Substrate Dislocation Defect Inspection System

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The DISPEC‑9000, based on the advanced Pump‑Probe Reflection principle, enables rapid optical non-destructive inspection of 6‑, 8‑, and 12‑inch SiC substrates. It accurately identifies three critical dislocation types (TSD, TED, BPD) while also detecting SF, MP, carbon inclusions, and polycrystalline defects. The system supports dual-side inspection of both Si and C faces. Its inspection throughput is highly efficient: 4–5 wafers per hour for 6‑inch, 2–3 wafers per hour for 8‑inch, and approximately 1 hour per wafer for 12‑inch (manual loading).

Equipped with AI-powered algorithms, DISPEC‑9000 assists in precise defect identification and density analysis, while also supporting customizable defect analysis. This enables full-chain defect tracking from substrate to epitaxy to device. Compared with traditional KOH etching methods, DISPEC‑9000 not only provides non-destructive detection but can effectively distinguish between TSD and TED signals, with results highly consistent with XRT measurements. It helps substrate manufacturers reduce production costs and offers strong support for cost efficiency improvements across the entire industry chain.
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  • DISPEC 9000

Core Advantages
Specifications
Case Examples
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Key Features

  • Optical non-destructive inspection replaces KOH etching

  • AI-assisted precise identification and classification of defects such as TSD, TED, BPD, SF, and MP

  • High speed and high throughput to meet mass production inspection requirements

  • Inspection accuracy comparable to XRT

  • Compatible with ingot and non-standard seed crystal inspection


Overcoming Industry Challenges

Traditional KOH etching methods are not only destructive but also generally unable to accurately distinguish between TSD and TED, leading to a severe underestimation of TSD density in SiC substrates. By combining non-destructive detection with AI-based recognition, this product can effectively differentiate and identify TSD and TED signals, with results highly consistent with XRT measurements.

Specifications

Throughput

4-5 wafers/hour (6"); 2-3 wafers/hour (8"); 12" manual loading

Supported Inspection Object

N-type SiC substrate
Compatible Sample Sizes

6", 8", and 12

Inspection Defect Type

 TED, TSD, BPD, SF, MP, carbon inclusions, heterocrystalline defects, and other defects

Featured Functions

Capable of inspecting both the Si face and C face; AI-powered precise defect identification and density analysis; Customizable defect analysis capabilities.


Case Examples

Optical Non-destructive Dislocation Defect Inspection vs. KOH Etching and XRT

Optical Non-destructive inspection methods results highly consistent with KOH Etching. Combined with AI defect recognition capabilities, precise classification and detection of TED/TSD/BPD can be achieved.

DIS 9000-EX-1

Optical Non-destructive inspection methods exhibit high consistency in accuracy with XRT

DIS 9000-EX-2


Feasibility of Inspecting the Si Surface and C Surface of Substrate Wafers

DIS 9000-EX-3


Research on the Evolution Process of Dislocation Defects

DIS 9000-EX-4



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