The TAU‑9000 system employs pump‑probe‑based ultrafast transient spectroscopy imaging to achieve high temporal and spatial resolution characterization of wafer minority carrier lifetimes. Photogenerated carriers are excited by pump light, and their decay dynamics are measured through time-resolved imaging, enabling precise assessment of the effects of dislocations, point defects, and surface contamination on carrier lifetimes, thereby reflecting overall wafer quality.
The system supports multiple wafer sizes (2″, 4″, 6″, 8″, 12″) and a range of materials including SiC, GaN, GaAs, InP, and Si, with a lifetime measurement range from <5 ns to several seconds, spatial resolution of 275 μm, and temporal resolution of 1–10 ns. A vacuum chamber prevents optical damage to the sample surface. Integrated AI algorithms enable quantitative defect density analysis and customized evaluation, allowing full-chain quality tracking from substrate, through epitaxy, to device.
The system supports multiple wafer sizes (2″, 4″, 6″, 8″, 12″) and a range of materials including SiC, GaN, GaAs, InP, and Si, with a lifetime measurement range from <5 ns to several seconds, spatial resolution of 275 μm, and temporal resolution of 1–10 ns. A vacuum chamber prevents optical damage to the sample surface. Integrated AI algorithms enable quantitative defect density analysis and customized evaluation, allowing full-chain quality tracking from substrate, through epitaxy, to device.
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