DISPEC-8000 Non-destructive SiC Ingot/Seed/Substrate 3-in-1 Dislocation Defect Inspection System

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DISPEC-8000 Non-destructive SiC Ingot/Seed/Substrate 3-in-1 Dislocation Defect Inspection System

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The DISPEC-8000 utilizes the pump-probe reflection principle to perform non-destructive optical inspection of compound semiconductor materials. This system is suitable for inspecting N-type SiC ingots, seed crystals, and wafers, and supports analysis of wafers of various sizes. It can accurately identify key dislocation defects such as TSD, TED, and BPD, while also supporting the detection of various defect types, including SF, MP, carbon inclusions, and epitaxial defects. Additionally, it supports dual-surface analysis of both the Si and C faces. Compared to automated systems, the DISPEC-8000 operates in a manual mode, offering greater flexibility and making it suitable for R&D validation, small-batch testing, and diverse application scenarios. Compared to traditional KOH etching methods, the DISPEC-8000 enables true non-destructive inspection. It effectively distinguishes between TSD and TED signals, with inspection results highly consistent with those of the XRT method. While ensuring inspection accuracy, the device helps users reduce costs and improve efficiency during R&D and production through more flexible operation and broader inspection capabilities, providing reliable support for the compound semiconductor industry chain.
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DISPEC 8000

Principle

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Principle

The high-speed, non-destructive defect inspection technology for compound semiconductor wafers developed by Time-Tech Spectra is based on photogenerated carrier dynamics spectroscopy. Under optical excitation, electron–hole pairs are generated and exhibit a characteristic lifetime in an ideal lattice. However, crystallographic defects such as dislocations, stacking faults, and point defects introduce carrier trapping and non-radiative recombination, resulting in reduced local carrier concentration and shortened lifetimes.

By analyzing the spatial distribution and time-resolved decay dynamics of photogenerated carriers, the location, distribution, and density of defects can be quantitatively characterized. This approach integrates transient absorption/reflection imaging and time-resolved photoluminescence spectroscopy, relying on excited-state absorption and radiative recombination signals, respectively, enabling high-sensitivity, high-throughput, wafer-scale inspection across materials including SiC, GaN, Ga₂O₃, GaAs, and InP.

Key Features

Optical non-destructive inspection replaces KOH etching
AI-assisted precise identification and classification of defects such as TSD, TED, BPD, SF, and MP
High speed and high throughput to meet mass production inspection requirements
Inspection accuracy comparable to XRT
Compatible with ingot and non-standard seed crystal inspection

Overcoming Industry Challenges

Traditional KOH etching methods are not only destructive but also generally unable to accurately distinguish between TSD and TED, leading to a severe underestimation of TSD density in SiC substrates. By combining non-destructive detection with AI-based recognition, this product can effectively differentiate and identify TSD and TED signals, with results highly consistent with XRT measurements.

Specifications

Inspection Speed	~15 min/piece (6"); ~30 min/piece (8"); Ingot < 1 hour (8")
Supported Inspection Objects	N-type SiC ingots, seeds, and wafers
Compatible Sample Sizes	6", 8", and 12"
Inspection Defect Types	TED, TSD, BPD, SF, MP, carbon inclusions, heterocrystalline defects, and other defects
Featured Functions	Compatible with ingots/seeds/wafers; Capable of inspecting both Si-face and C-face; Intelligent AI-assisted accurate defect identification & density analysis; Custom defect analysis

Case Examples

Specifically designed for detecting critical defects in ingots

It rapidly identifies fatal flaws such as SF, MP, and polycrystalline structures after ingot growth. It can also be used for manual loading of seed crystals or substrate wafer inspection

DIS 8000-EX-1

High consistency with KOH

DIS 8000-EX-1

DISPEC-8000 Non-destructive SiC Ingot Seed Substrate 3-in-1 Dislocation Defect Inspection System.pdf

DISPEC-8000 Non-destructive SiC Ingot/Seed/Substrate 3-in-1 Dislocation Defect Inspection System

Principle

Key Features

Overcoming Industry Challenges

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