The DISPEC-8000 utilizes the pump-probe reflection principle to perform non-destructive optical inspection of compound semiconductor materials. This system is suitable for inspecting N-type SiC ingots, seed crystals, and wafers, and supports analysis of wafers of various sizes. It can accurately identify key dislocation defects such as TSD, TED, and BPD, while also supporting the detection of various defect types, including SF, MP, carbon inclusions, and epitaxial defects. Additionally, it supports dual-surface analysis of both the Si and C faces. Compared to automated systems, the DISPEC-8000 operates in a manual mode, offering greater flexibility and making it suitable for R&D validation, small-batch testing, and diverse application scenarios.
Compared to traditional KOH etching methods, the DISPEC-8000 enables true non-destructive inspection. It effectively distinguishes between TSD and TED signals, with inspection results highly consistent with those of the XRT method. While ensuring inspection accuracy, the device helps users reduce costs and improve efficiency during R&D and production through more flexible operation and broader inspection capabilities, providing reliable support for the compound semiconductor industry chain.
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