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SL-9000 InP / GaAs Substrate Defect Inspection System

Wavelength tunability in an industrial design

Single-box solution

Tunable or fixed-wavelength models

Plug-and-play installation and robust performance

The most compact OPA in the market

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SL-9000 InP / GaAs Substrate Defect Inspection System

The SL-9000 is a non-destructive optical inspection system for compound semiconductor substrates, designed primarily for indium phosphide (InP), with scalability to gallium arsenide (GaAs). Suitable for both conductive and semi-insulating substrates, the system images and maps threading dislocations and other lattice defects to support substrate quality assessment and process optimization.

Using defect-induced photoluminescence (PL) quenching, the SL-9000 reveals the microscopic features and spatial distribution of dislocations through variations in luminescence intensity, without destructive chemical etching. For InP substrates, the inspection depth is approximately 1–3 μm below the surface. Comparative studies on sulfur-doped and iron-doped InP samples show good correspondence between optically mapped dislocations and etch pit inspection results.

Equipped with an AI analysis system and compatible with bright-field and dark-field inspection, the SL-9000 also supports the assessment of surface defects, including scratches, particles, and contamination. Combining non-destructive inspection with efficient measurement, it supports compound semiconductor substrate research, manufacturing, and quality control.

PRODUCTS FEATURE

Multi-mode Multi-range Detection: Equipped with transmission, reflection, and back-excitation modes. Detection spectrum covers UV to NIR bands, suitable for diverse samples including tetracene dimers and CdSe quantum dots, delivering excellent performance across UV-NIR ranges.

High Resolution: Temporal resolution ≤1.5×femtosecond laser pulse width; Spatial resolution ≤1μm (microscopic dynamics imaging module). Enables precise capture of transient processes, supporting carrier migration studies in photocatalysis and perovskite solar cells.

Automation & Intelligence: Fully automated optical path switching/calibration ensures operational stability. Integrated software for data acquisition/analysis improves experimental efficiency.

High Expandability: Modular design allows flexible configuration upgrades.

SPECIFICATIONS

Main

Laser type	TA-AUTO	TA-MINI
Spectral range (1030 nm laser based）	380—650 nm	380—650 nm
		480—950 nm	480—950 nm（Default）
		1100—1650 nm	—
Mode	Transmission/reflection/back-side pump
Time window	8 ns
Sensitivity	0.1 mOD, up to 0.02 mOD
Sample holder	Solution, film, and powder
Software	Data acquisition, analysis and fitting
IRF	≤1.5x Pulse width
Automation system	Automated switching of spectral ranges
		Automated pump beam alignment
		Automated optical delay line alignment

Time-Resolved Micro-Imaging Module


Mode	Micro spectroscopy acquisition/wide-field TA imaging/Carrier diffusion imaging
Spatial resolution	≤1 μm
Wavelength range	400-800 nm
Carrier migration accuracy	100 nm

Nanosecond TA Upgrade Module

Mode			Switchable transmission/Reflection
Spectral Detection Range			360-1700 nm
Time window			≤ 450 μs
Time Resolution			1 ns
Maximum Detection Sensitivity			≤ 0.1 mOD
NS-SC Laser	Spectral Range	350-1800 nm
		Pulse Width	~800 ps
		Repetition Rate	2 KHz
		Power Stability	±1%
		Total Average Optical Power	>5 mW

Electrical Excitation Module


Maximum Voltage	±5 V（±10 V)
Pulse Width	6 ns - 999.99 s
Repetition Rate	1 μHz - 80 MHz
Electrical Pulse Rise Time (0-5 V)	≤5 ns (Default), optional ≤2 ns

ULTRAFAST TRANSIENT ABSORPTION APPLICATION EXAMPLES

UV Range Data

Sample Experiment

Sample	Perovskite Thin Film
Excitation Wavelength	405 nm
Probe Wavelength	UV

Visible Range Data


Sample	Ni-TPA
Excitation Wavelength	370 nm
Probe Wavelength	Visible

NIR Range Data


Sample	Graphite
Excitation Wavelength	495 nm
Probe Wavelength	NIR

Micro Transmission TA


Sample	Single layer WS2 (substrate: sapphire)
Excitation Wavelength	515 nm
Probe Wavelength	Visible

Micro Reflection TA


Sample	Multilayer WS2 (substrate: Si)
Excitation Wavelength	515 nm
Probe Wavelength	Visible

Wide-field TA Imaging


Sample	Monolayer WS2
Excitation Wavelength	515 nm
Probe Wavelength	610 nm

Near Infrared Imaging


Sample	WS2
Excitation Wavelength	515 nm
Probe Wavelength	900 nm

Carrier Migration Data Diagram


Sample	Perovskite-type Copper Fluoro-oxytitanate
Excitation Wavelength	650 nm
Probe Wavelength	800 nm

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SL-9000 InP / GaAs Substrate Defect Inspection System

Sample Experiment

Sample Experiment

Sample Experiment

Sample Experiment

Sample Experiment

Sample Experiment

Sample Experiment

Sample Experiment

Electron injection and defect passivation for high-efficiency mesoporous perovskite solar cells

Unveiling Spatiotemporal Diffusion of Hot Carriers Influenced by Spatial Nonuniform Hot Phonon Bottleneck Effect in Monolayer MoS2

Ultrafast Investigation of the Strong Coupling System between Square Ag Nanohole Array and Monolayer WS2

Highly Efficient and Stable CsPbI3 Perovskite Quantum Dots Light-Emitting Diodes Through Synergistic Effect of Halide-Rich Modulation and Lattice Repair

High Ambipolar Mobility and Long-Range Carrier Transport in Violet Phosphorus Nanosheet

Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing

Visualizing Carrier Diffusion in Cs-Doping FAPbI3 Perovskite Thin Films Using Transient Absorption Microscopy

Engineering singlet and triplet excitons of TADF emitters by different host-guest interactions

Conjugated linker-boosted self-assembled monolayer molecule for inverted perovskite solar cells

Tuning Spin-Polarized Lifetime at High Carrier Density through Deformation Potential in Dion–Jacobson-Phase Perovskites

Photoconductance from the Bent-to-Planar Photocycle between Ground and Excited States in Single-Molecule Junctions

Aggregation Enhanced Thermally Activated Delayed Fluorescence through Spin-Orbit Coupling Regulation

Boosting Interfacial Charge-Transfer Kinetics for Efficient Overall CO2 Photoreduction via Rational Design of Coordination Spheres on Metal–Organic Frameworks

Dynamical Transformation of Two-Dimensional Perovskites with Alternating Cations in the Interlayer Space for High-Performance Photovoltaics

Triplet Energy Transfer from CsPbBr3 Nanocrystals Enabled by Quantum Confinement

Controlling Exciton and Valley Dynamics in Two-Dimensional Heterostructures with Atomically Precise Interlayer Proximity

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