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| The TA100 is a transient absorption spectrometer designed to probe photo-induced electronic transitions and their dynamic evolution in materials. It covers a broad spectral range from the ultraviolet (UV) through visible and near-infrared (NIR) to mid-infrared (MIR), and supports time resolutions spanning from the femtosecond to the microsecond scale. The system can be integrated with a microscopy module to achieve high-spatial-resolution transient absorption spectroscopy. Additionally, it can incorporate a high-speed CMOS area camera to enable spatial defect mapping and carrier diffusion mobility measurements. For high-repetition-rate laser sources, the system can be further expanded with high-speed detectors to enhance detection sensitivity, achieving levels as low as ≤10 -5 OD. | |||||||||
Specifications
Main
| Laser type | TA-AUTO | TA-MINI |
| Spectral range | 280 - 380 nm | 380 - 600 nm |
| 320 - 650 nm | 480 - 950 nm (Default) | |
| 420 - 800 nm | - | |
| 850 - 1500 nm | - | |
| Mode | Transmission/Reflection/Back Pump | |
| Time window | 8 ns | |
| Sensitivity | ≤10-5 OD | |
| IRF | ≤ 1.5x Pulse Width | |
| Automation System | Automated switching of spectral ranges. Automated pump beam alignment. Automated optical delay line alignment | |
| Sample holder | Solution/Film/Powder | |
| Software | Data acquisition, Analysis, and Fitting | |
Microscopic Kinetics Imaging Module
| Mode | Micro spectroscopy acquisition/Wide-field TA imaging/Carrier migration imaging |
| Spatial resolution | ≤1 μm |
| Wavelength range | 400-800 nm |
| Carrier migration accuracy | 100 nm |
Nanosecond Extension Module
| Mode | Switchable transmission/reflection | |
| Spectral Detection Range | 360-1700 nm | |
| Time window | ≤ 450 μs | |
| Time Resolution | 1 ns | |
| Maximum Detection Sensitivity | ≤ 0.1 mOD | |
| NS-SC Laser | Spectral Range | 350-1800 nm |
| Pulse Width | ~800 ps | |
| Repetition Rate | 2 KHz | |
| Power Stability | ±1% | |
| Total Average Optical Power | >5 mW | |
Electrical Pump Extension Module
| Maximum Voltage | ±5 V（±10 V) |
| Pulse Width | 6 ns - 999.99 s |
| Repetition Rate | 1 μHz - 80 MHz |
| Electrical Pulse Rise Time (0-5 V) | ≤5 ns (Default), optional ≤2 ns |
Visible Data
Sample Experiment
| Sample | CdSe QDs |
| Excitation Wavelength | 400 nm |
| Probe Wavelength | Visible |
Ultrafast Transient Absorption Testing Instance
UV Data
Sample Experiment
| Sample | Tetracene dimer |
| Excitation Wavelength | 405 nm |
| Probe Wavelength | UV-visibl |
NIR Data
Sample Experiment
| Sample | Pbs QDs |
| Excitation Wavelength | 550 nm |
| Probe Wavelength | NIR |
Micro Transmission TA
Sample Experiment
| Sample | Single layer WS2 (substrate: sapphire) |
| Excitation Wavelength | 515 nm |
| Probe Wavelength | Visible |
Micro Reflection TA
Sample Experiment
| Sample | Monolayer WS2 (substrate: Si) |
| Excitation Wavelength | 515 nm |
| Probe Wavelength | Visible |
Wide-field TA Imaging
Sample Experiment
| Sample | Monolayer WS2 |
| Excitation Wavelength | 515 nm |
| Probe Wavelength | 610 nm |
Near Infrared Imaging
Sample Experiment
| Sample | WS2 |
| Excitation Wavelength | 515 nm |
| Probe Wavelength | 900 nm |
Carrier Migration Data Diagram
Sample Experiment
| Sample | WS2 |
| Excitation Wavelength | 400 nm |
| Probe Wavelength | 580-620 nm |
