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| Dispec9000 is a non-contact, non-destructive system designed for inspecting dislocation defects in SiC substrates. Based on transient spectroscopy technology, it offers a typical inspection speed of 4 wafers per hour (WPH). The system is compatible with 6-inch, 8-inch, and other custom wafer sizes. With its fully automated operation and exceptional stability, Dispec9000 is well-suited for SiC substrate and epitaxy manufacturers, as well as universities and research institutes focused on SiC materials. | |||||||||
Product Feature
Designed specifically for SiC substrate wafers dislocation defect detection
Non-destructive optical methodology to replace destructive KOH etching
Precise and isolate identification of TSD/TED/BPD in one scan
Compatible wafer size and type: 4'/6'/8'; conductive and semi-insulating
Throughput: ~15 min. per 6' wafer (avg.)
AI empowered BPD, TSD, TED Identification with > 90% accuracy
Advanced review and annotation software
