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| he 50kHz/100kHz ultra-high-speed visible detector is based on a CMOS linear array image sensor. Its ultra-high line rate allows for the acquisition of a more accurate average spectrum per unit time. The large well depth brought about by the large pixels is very suitable for fine measurements in strong light applications. The dual linear array version makes the synchronous detection of the reference light very stable and convenient. | |||||||||
Products Overview
he 50kHz/100kHz ultra-high-speed visible detector is based on a CMOS linear array image sensor. Its ultra-high line rate allows for the acquisition of a more accurate average spectrum per unit time. The large well depth brought about by the large pixels is very suitable for fine measurements in strong light applications. The dual linear array version makes the synchronous detection of the reference light very stable and convenient.
The high-speed visible detector with broad-spectrum response is based on a CMOS linear array image sensor. It also has a certain response in the ultraviolet band. Its high line rate allows for the acquisition of a high-precision average spectrum per unit time. The large pixels endow it with a large well depth. The switchable high and low gain modes make the application flexible. The dual linear array version makes the synchronous detection of the reference light very stable and convenient. Moreover, this detector is available in 1024/512 pixel versions.
The high-speed near-infrared detector with broad-spectrum response is based on an InGaAs linear array image sensor. Its spectral response range covers 500-1700nm. Its high line rate allows for the acquisition of a high-precision average spectrum per unit time. The large pixels endow it with an extremely high full well capacity. Meanwhile, the switchable high and low gain modes make the application flexible. The dual linear array version makes the synchronous detection of the reference light very stable and convenient.
The high-sensitive high-speed visible detector is based on a CMOS linear array image sensor. It has an extremely high photoelectric conversion efficiency, which is very suitable for low-light detection applications. Its high line rate allows for the acquisition of a high-precision average spectrum per unit time. The dual linear array version makes the synchronous detection of the reference light very stable and convenient. Also, this detector is available in 2048/512 pixel versions.
The visible detector with enhanced ultraviolet response is based on a CCD linear array image sensor. Its spectral response curve is smooth, and it has a good light response in the ultraviolet band. The resolution of 2048 pixels can meet the requirements of most applications. At the same time, it has a high photoelectric conversion efficiency, which is very suitable for low-light detection applications.
Feature
Diverse Broad-spectrum Response: It includes a variety of detectors, and the detection band covers 200 - 1700nm. For example, there are high-speed near-infrared detectors with broad-spectrum response (500 - 1700nm), high-speed visible detectors with broad-spectrum response (200 - 1000nm), etc., meeting the detection requirements of different optical signals.
High Quantum Efficiency: Each detector has a high peak quantum efficiency. For example, the 50kHz/100kHz ultra-high-speed visible detector has 70%@700nm, and the high-speed near-infrared detector with broad-spectrum response has 80%@1550nm, improving the detection sensitivity of optical signals and ensuring the accuracy of detection.
High Dynamic Range and Large Full Well Capacity: The dynamic range can reach up to 76dB at most, and the maximum full well capacity is 175Me - (low gain of the high-speed near-infrared detector with broad-spectrum response). It can adapt to optical signals of different intensities, avoid signal saturation or loss, and obtain complete optical signal information.
High-speed Acquisition and Multiple Trigger Modes: The maximum line rate can reach 100000lines/s (100kHz ultra-high-speed visible detector), the minimum exposure time is as short as 1μs, and the trigger modes include software (internal trigger)/hardware (external trigger), meeting the requirements of high-speed optical signal acquisition and facilitating synchronization with other devices.
Specifications
| line array version | 50 kHz: single/double line array | Single-/double-line array | Single-line array | ||
| 100 kHz: single line array | |||||
| Length of photosensitive area | 16.3mm | 25.6 mm (1024 pixel) | 12.8 mm | 28.672 mm (2048 pixel) | 28.672 mm |
| 12.8 mm (512 pixel) | 7.168 mm (512 pixel) | ||||
| Detection wave band | 400-1000 nm | 200-1000 nm | 500-1700 nm | 200-1000 nm | 200-1000 nm |
| Number of pixels in a single array | 128 | 1024, 512 | 256 | 2048, 512 | 2048 |
| Pixel size | 127 μm×127 μm | 25 μm×500 μm | 25 μm×500 μm | 14 μm×200 μm | 14 μm×500 μm |
| Peak quantum efficiency | 70% @ 700 nm | 58% @ 750 nm | 80% @ 1550 nm | 78% @ 700 nm | 76% @ 600 nm |
| Dynamic range | 72 dB | 69 dB (High Gain) | 72 dB (High Gain) | 76 dB | 72 dB |
| 74 dB (Low Gain) | 76 dB (Low Gain) | ||||
| Full-well capacity | 10 Me- | 5.8 Me (High Gain) | 17.5 Me (High Gain) | 0.1 Me- | 0.2 Me- |
| 25.3 Me (Low Gain) | 175 Me (Low Gain) | ||||
| Conversion efficiency | 0.35 μV/e- | 0.56 μV/e- (High Gain) | 0.16 μV/e- (High Gain) | 25 μV/e- | 10 μV/e- |
| 0.13 μV/e- (Low Gain) | 0.016 μV/e- (Low Gain) | ||||
| Maximum line rate | |||||
| Minimum exposure time | 2 μs | 1 μs | 2 μs | 6 μs | 2 μs |
| Data bit depth | 16 bit | ||||
| Temperature control mode | Active air conditioning | ||||
| Trigger mode | Software (internal trigger) / Hardware (external trigger) | ||||
| Synchronous signal input | External trigger, pump–probe synchronization | ||||
| Data interface | Gigabit Ethernet | ||||
| Power supply | 9V/2V | ||||
| Optical interface | Free space | ||||
| Camera size | 130 mm×121 mm×68 mm | ||||
| Application software | LabVIEW | ||||
| Operating environment | Temperature 0~40℃, humidity 10%~85% (no condensation) | ||||
